, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 genera l purpos e silico n epitaxia l junctio n pn p transistor s 2n93 5 2n327 a 2n93 6 2n328 a 2n93 7 2n329 a 2n93 8 2n102 5 2n93 9 2n102 6 2n94 0 2n146 9 electrica l dat a absolut e maximu m rating s paramete r collecto r l o emihe r voltag e co l l^clo r t o bat e vollag* ! emitte r t o bal e vollng e collecto r curren t powe r diltipotio n (fre e air ) junctio n temp t (ope r . a store ) uo d temp . (i/ i 6 " 11/32 " fro m coio ) deratin g facto r (fre e air) paramete r collecto r l o emitte r voltag e collecto r l o boi e vollaci e emitte r l o ba w voltoy e collecto r curren t powe r diiiipatio n (fre e air ) junctio n temp . (oper . & store ) lea d temp . (l/l6"il/32 " fro m caie ) derolin q facto r (tre e air ) symbo l bv e ,, , bvc.. . bvr~ . i n p t, t l 0, symbo l owr 0 bvcn n 0v . n. . i c p o t . ti . o r 2n93 5 2n327 a -4 0 -5 0 -2 0 2n93 4 2n32b a -3 5 -5 0 -2 0 2n'?3 7 2n329 a -3 0 -s o -j o -100m a 250ro w -650cio+i650 c 240" c fo r 1 0 se c . 1 .85mw/ c 2n93 b 2ni02 5 -3 5 -4 0 ~~"~40~ 2n93 9 7n103 a -35 -4 0 -4 0 -100m a 250m w 2n94 0 7n146 " -3 5 -4 0 -4 0 -65 c l o tl65 c 230 c lo r 1 0 sec . .o4mw/ c unit s v v v unit s v v v .._ . .2io.ot o t ) " .370 ma x .32i.00 5 . ~~ 2 n 32m/329a ; 2 n 1 025/ 1 026 ; 2 n 1 ?>.???/ *-'- 3 mlf h .100.00 i | j dagc . . emittl h / i * 4 ( 45*-'-3 f > \ +00 2 .u-m^.uu o v ,. , ? 1 7 -.00 1 ;-> s al t dimcrljion t i n lnr.hc l f*\ *? ? a r c ? ? to- 5 cao t ' " l - ^ [*---1qq.00 3 ^r i i i ' i a .100-1 - .oo s t t -u - f ^\^\ collecto r ^ % .04 3 ma x .02 9 mi n ??.? . j j_i. s min-j .omi.00 5 _ ^ i i oa5 c . , -*?i~ f - r t i 1 - al t dimension s i n inche s \. l semi-conductor s reserve s th e righ t i n chang e tes t conditions , pnramele r limit s an d packag e dimension s withou t notic e informatio n furnishe d b y n j scmi-cuniiucto n i s believe d t o h e bot h accurat e an d reliabl e a t th e tim e o r goin g t o press . howeve r m seini- t (injliltiir s .issiunc s n o responsibilit y fo r an y em m n r iiinissitin s discovere d i n it s us e n j .senu-( . ondiktcr s cncouruge s customer s t o vcril s ih;i t ilniashcet s ar e curren t befor e placin g i mie n downloaded from: http:///
electrica l characteristics : t, .. . 2 5 c (unles s otherwis e stated ) paramete r collector-bas e leakag e curren t emitter^bas e leakag e curren t collecto r saturatio n voltag e a. c . curren t gai n collecto r t o bas e capacitanc e alph a cutof f frequenc y spo t nois e figur e paramete r collector-bas e leakag e curren t emitter-bas e leakag e curren t collecto r saturatio n voltag e a.c . curren t gai n collecto r t o bas e capacitanc e alph a cutof f frequenc y spo t nois e figur e symbo l ico o lea o vce (si>[ ) hf a cob -??f. b n.f . symbo l icb o lea o vce (jat ) hi . cob f.i , n.f . conditio n vc o = -30 v vc u " -20 v l c - -5ma , l u - -2m a vc e = -6v , i s = 1 .oma , f = 1k c vc d = -5v , f - 100k c vc d = -6v , k - 1 .om a l c - - 1 .oma , r g - 1k q conditio n vc o = -35 v v c b - -35 v l c = -5ma , i n = -2m a ve t = -6v , i e = 1 .oma , f = 1k c vc d = -6v , f = im c vc n = -6v , l c - ] .om a l c = - 1 .oma , r g = ik q 2n935/2n327 a min . - - - 9 - 0.1 5 - typ . 5. 0 5. 0 - 14 7 0 0. 2 1 8 max . 10 0 100 ' 0. 3 2 2 11 0 - - 2n938/2n102 5 min . - -- 9 - 1 . 0 - typ . 1 . 0 1 . 0 - 1 5 7 - - max . 2 5 2 5 0. 3 2 2 1 2 - 2 5 2n936/2n328 a min , - - - 1 8 - 0. 2 - typ . 5. 0 5. 0 - 2 8 7 0 0. 3 1 8 max . 10 0 10 0 0. 5 4 4 11 0 -- 2n939/2n102 6 min . -- - 1 8 - 2. 0 - typ . 1 . 0 1. 0 - 3 0 7 -- max . 2 5 2 5 0. 3 4 4 1 2 - 2 5 2n937/2n329 a min . - ?-;? ? 3 6 " 1 0.2 5 - tyi> . 5. 0 ,5. 0 6 0 7 0 0. 5 1 0 max . 10 0 10 0 0. 6 b u 11 0 2two/2n146 9 min . - -- 3 6 - 2. 0 - typ . 1 . 0 1 . 0 - 6 0 7 - max . 2 5 2 5 0. 3 bo 1 2 2 5 unit s n a n a v pf d m c d b unit s n a n a v pf d m c d b downloaded from: http:///
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